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FDS86252 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ | |||
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April 2011
FDS86252
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Features
General Description
 Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
 Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
 High performance trench technology for extremely low rDS(on)
 High power and current handling capability in a widely used
surface mount package
 100% UIL Tested
 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintaiin superior switching performance.
Application
 DC-DC Conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
4.5
20
60
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS86252
Device
FDS86252
Package
SO-8
Reel Size
13 ââ
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS86252 Rev. C
www.fairchildsemi.com
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