FDS6688AS Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
V_SD
Drain–Source Diode Forward
V_GS = 0 V, I_S = 3.5 A (Note 2)
Voltage
V_GS = 0 V, I_S = 7 A
(Note 2)
t_rr
Diode Reverse Recovery Time
I_F = 14.5A,
I_RM
Diode Reverse Recovery Current ^{diF/dt = 300 A/µs}
(Note 3)
0.4 0.7
V
0.5
27
nS
1.9
A
Q_rr
Diode Reverse Recovery Charge
26
nC
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in²
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in²
pad of 2 oz copper
FDS6688AS Rev C