FDS6688AS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™

November 2008
tm
FDS6688AS
30V N-Channel PowerTrench^® SyncFET^™
General Description
The FDS6688AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDS6688AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 14.5 A, 30 V. R_DS(ON) max= 6.0 mΩ @ V_GS = 10 V
R_DS(ON) max= 7.3 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low
R_DS(ON) and fast switching
• High power and current handling capability
• RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6688AS
FDS6688AS
13’’
5
4
6
3
7
2
8
1
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6688AS Rev C