FDS4685 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 40V P-Channel PowerTrench MOSFET

Typical Characteristics:
50
V_GS = -10V -6.0V _-4.5V
-4.0V
40
30
-3.5V
20
-3.0V
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
I_D = -8.2A
V_GS = - 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
2.4
2.2
V_GS = - 3.5V
2
1.8
1.6
-4.0V
-4.5V
1.4
-5.0V
-6.0V
1.2
-8.0V
-10V
1
0.8
0
10
20
30
40
50
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
0.08
I_D = -4.1A
0.07
0.06
0.05
0.04
T_A = 125° C
0.03
0.02
T_A = 25° C
0.01
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
V_DS = -5V
40
T_A = -55°C
25°C
30
125°C
20
10
0
1.5
2
2.5
3
3.5
4
4.5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
V_GS = 0V
10
1
0.1
0.01
T_A = 125° C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
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FDS4685 Rev. C(W)