FDS4685 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 40V P-Channel PowerTrench MOSFET

June 2005
FDS4685
40V P-Channel PowerTrench^® MOSFET
Features
■ –8.2 A, –40 V R_DS(ON) = 0.027 Ω @ V_GS = –10 V
R_DS(ON) = 0.035 Ω @ V_GS = –4.5 V
■ Fast switching speed
■ High performance trench technology for extremely low
R_DS(ON)
■ High power and current handling capability
Applications
■ Power management
■ Load switch
■ Battery protection
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V – 20V).
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Ratings
–40
±20
–8.2
–50
2.5
1.4
1.2
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4685
Device
FDS4685
Reel Size
13”
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS4685 Rev. C(W)
www.fairchildsemi.com