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FDS3572 Datasheet, PDF (3/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET
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Typical Characteristics TA = 25°C unless otherwise noted
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
10
VGS = 10V
8
6
4
2
RθJA=50oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
RθJA=50oC/W
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
100
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 150 - TA
125
10
5
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
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