FDS3572 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

November 2003
FDS3572
N-Channel PowerTrench^® MOSFET
80V, 8.9A, 16mΩ
Features
• r_DS(ON) = 14mΩ (Typ.), V_GS = 10V, I_D = 8.9A
• Q_g(tot) = 31nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus
Converters
Formerly developmental type 82663
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 100^oC, V_GS = 10V, R_θJA = 50^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Package Marking and Ordering Information
Device Marking
FDS3572
Device
FDS3572
Package
SO-8
Reel Size
330mm
5
4
6
3
7
2
8
1
Ratings
80
±20
8.9
5.6
Figure 4
515
2.5
20
-55 to 150
25
50
85
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
o_C/W
o_C/W
o_C/W
Tape Width
12mm
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A