FDR8508P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrench™ MOSFET

Typical Characteristics
20
VGS=-10V _-6.0V
16
-4.5V
-4.0V
12
-3.5V
8
4
-3.0V
0
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1: On-Region Characteristics
0.12
0.1
0.08 ^VGS=-3.5V
-4.0V
0.06
-4.5V
-5.5V
0.04
-7.0V
-10V
0.02
0
4
8
12
16
20
-ID, DRAIN CURRENT (A)
Figure 2: On-Resistance Variation
vs Drain Current and Gate Voltage
1.4
ID=-3A
1.3 V_GS=-10V
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3: On-Resistance Variation
vs Temperature
0.2
0.16
ID=-1.5A
0.12
0.08
0.04
TJ=125^oC
o
0
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4: On-Resistance Variation
vs Gate-To-Source Voltage
20
VGS=-5V
16
12
TJ=-55^oC
25^o
125^oC
8
4
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5: Transfer Characteristics
100
VGS=0
10
1
0.1
0.01
TJ=125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE VOLTAGE (V)
Figure 6: Body Diode Forward Voltage
Variation vs Source Current
and Temperature
FDR8508P Rev. C