FDR8508P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrench™ MOSFET

March 1999
FDR8508P
Dual P-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• Load switch
• DC/DC converter
• Motor driving
Features
• -3.0 A, -30 V. R_DS(ON) = 0.052Ω @ V_GS = -10V
R_DS(ON) = 0.086Ω @ V_GS = -4.5V.
• Low gate charge. (8nC typical).
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability.
• Small footprint (38% smaller than a standard SO-8);
low profile package (1 mm thick); power handling
capability similar to SO-8.
D2
D2
D1
5
D1
6
S2
7
G2
S1
8
SuperSOT-8 pin #1 ^G1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.8508
FDR8508P
13”
4
3
2
1
FDR8508P
-30
±20
-3
-20
0.8
-55 to +150
Units
V
V
A
W
°C
156
°C/W
40
°C/W
Tape Width
12mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDR8508P Rev. C