FDPF5N60NZ Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel MOSFET 600V, 4.5A, 2.0Ω

Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
V_GS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
1
10 20
V_DS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
3
V_GS = 10V
2
V_GS = 20V
*Note: T_C = 25^oC
1
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
1000
C_iss
100
C_oss
C_rss
10
C_iss = C_gs + C_gd (C_ds = shorted) *Note:
C_oss = C_ds + C_gd
C_rss = C_gd
1. V_GS = 0V
2. f = 1MHz
1
10^-1
1
10
30
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
20
10
150^oC
25^oC
1
0.1
2
-55^oC
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
40
10
150^oC
25^oC
1
0.1
0.2
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 120V
8
V_DS = 300V
V_DS = 480V
6
4
2
*Note: I_D = 4.5A
0
0
2
4
6
8
10
Q_g, Total Gate Charge [nC]
FDP5N60NZ / FDPF5N60NZ Rev. A
3
www.fairchildsemi.com