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FDPF5N60NZ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel MOSFET 600V, 4.5A, 2.0Ω
FDP5N60NZ / FDPF5N60NZ
N-Channel MOSFET
600V, 4.5A, 2.0Ω
Features
• RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A
• Low Gate Charge ( Typ. 10nC)
• Low Crss ( Typ. 5pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
March 2011
UniFET-IITM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
G DS
TO-220F
FDPF Series
(potting)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FDP5N60NZ FDPF5N60NZ
600
±25
4.5
4.5*
2.7
2.7*
18
18*
175
4.5
10
10
100
33
0.8
0.27
-55 to +150
300
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
FDP5N60NZ
1.25
0.5
62.5
FDPF5N60NZ
3.75
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2011 Fairchild Semiconductor Corporation
1
FDP5N60NZ / FDPF5N60NZ Rev. A
www.fairchildsemi.com