FDPF12N50UT Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM Ultra FRFETTM MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 _{VGS = 15.0 V}
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
Figure 2. Transfer Characteristics
30
10
150^oC
25^oC
*Notes:
1. 250s Pulse Test
2. T_C = 25^oC
1
1
10
20
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
1.2
1.0
V_GS = 10V
0.8
V_GS = 20V
0.6
0
*Note: T_J = 25^oC
5
10
15
20
25
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
*Note:
C_iss
1. V_GS = 0V
2. f = 1MHz
1000
C_oss
500
C_rss
0
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
*Notes:
1. V_DS = 20V
2. 250s Pulse Test
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150^oC
10
25^oC
*Notes:
1. V_GS = 0V
1
2. 250s Pulse Test
0.0
0.5
1.0
1.5
2.0
2.5
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 100V
8
V_DS = 250V
V_DS = 400V
6
4
2
0
*Note: I_D = 10A
0
5
10
15
20
25
Q_g, Total Gate Charge [nC]
©2012 Fairchild Semiconductor Corporation
3
FDPF12N50UT Rev.C1
www.fairchildsemi.com