FDPF12N50UT Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM Ultra FRFETTM MOSFET

March 2013
FDPF12N50UT
N-Channel UniFET^TM Ultra FRFET^TM MOSFET
500 V, 10 A, 800 m
Features
• R_DS(on) = 650 m (Typ.) @ V_GS = 10 V, I_D = 5 A
• Low Gate Charge (Typ. 21 nC)
• Low C_rss (Typ. 11 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFET^TM MOSFET is Fairchild Semiconductor^®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFET^TM MOSFET has much
superior body diode reverse recovery performance. Its t_rr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switch-
ing power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
GDS
TO-220F
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
1
FDPF12N50UT Rev.C1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FDPF12N50UT
500
±30
10*
6*
40*
456
10
16.5
20
42
0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
FDPF12N50UT
3.0
62.5
Unit
o_C/W
www.fairchildsemi.com