FDPF12N50NZT Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m

Typical Characteristics
Figure 1. On-Region Characteristics
30
V_GS = 15.0 V
10.0 V
10
8.0 V
7.0 V
6.5V
6.0 V
5.5 V
1
0.1
0.1
*Notes:
1. 250s Pulse Test
2. T_C = 25^oC
1
10 20
V_DS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.9
0.8
0.7
0.6
V_GS = 10V
0.5
0.4
0
V_GS = 20V
*Note: T_C = 25^oC
6
12
18
24
30
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
2500
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
1500
*Note:
1. V_GS = 0V
2. f = 1MHz
C_iss
1000
500
0
0.1
C_rss
C_oss
1
10
30
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
50
10
150^oC
25^oC
1
-55^oC
0.1
3
*Notes:
1. V_DS = 20V
2. 250s Pulse Test
4
5
6
7
8
9 10
V_GS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150^oC
10
25^oC
*Notes:
1. V_GS = 0V
1
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
V_DS = 100V
V_DS = 250V
V_DS = 400V
6
4
2
0
*Note: I_D = 11.5A
0
5
10
15
20
25
Q_g, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
3
FDP12N50NZ / FDPF12N50NZ Rev. C1
www.fairchildsemi.com