FDPF12N50NZT Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m

FDP12N50NZ / FDPF12N50NZ
N-Channel UniFET^TM II MOSFET
500 V, 11.5 A, 520 m
November 2013
Features
• R_DS(on) = 460 m (Typ.) @ V_GS = 10 V, I_D = 5.75 A
• Low Gate Charge (Typ. 23 nC )
• Low C_rss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFET^TM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
GDS
TO-220
GDS
TO-220F
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
FDP12N50NZ FDPF12N50NZ
500
±25
11.5
11.5*
6.9
6.9*
(Note 1)
46
46*
(Note 2)
560
(Note 1)
11.5
(Note 1)
17
(Note 3)
4.5
170
42
1.37
0.33
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP12N50NZ
0.73
62.5
FDPF12N50NZ
3.0
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDP12N50NZ / FDPF12N50NZ Rev. C1
www.fairchildsemi.com