FDP6035L Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – N-Channel Logic Level Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics
100
V_GS = 10V
7.0
80 _6.0
60
40
5.5
5.0
4.5
4.0
20
3.5
3.0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 26A
1.6 V GS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150 175
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
60
V_DS = 10V
50
40
T_A = 125°C
25°C
-55°C
30
20
10
0
1
2
3
4
5
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
2.5 ^V GS ^=3.5V
4.0
2
4.5
1.5
5.0
5.5
6.0
7.0
1
10
0.5
0
20
40
60
80
100
I_D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate
0.05
I_D= 26A
0.04
0.03
0.02
T_A = 125°C
0.01
0
2
25°C
4
6
8
10
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
VGS =0V
10
1
0.1
0.01
TA= 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6035L Rev.B