FDP19N40_12 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 400V, 19A, 0.24Ω

Typical Performance Characteristics
Figure 1. On-Region Characteristics
40 _{VGS = 15.0V}
10.0V
8.0 V
10
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.03
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
0.1
1
10
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.40
0.35
0.30
0.25
0.20
0.15
0
V_GS = 10V
V_GS = 20V
*Note: T_J = 25^oC
10
20
30
40
50
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
3000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
2500
2000
*Note:
1. V_GS = 0V
2. f = 1MHz
C_iss
1500
C_oss
1000
500
C_rss
0
0.1
1
10
30
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
50
10
150^oC
-55^oC
25^oC
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
1
4
5
6
7
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
150^oC
10
25^oC
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
1
0.2
0.6
1.0
1.2
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 100V
V_DS = 200V
8
V_DS = 320V
6
4
2
*Note: I_D = 19A
0
0 5 10 15 20 25 30 35
Q_g, Total Gate Charge [nC]
FDP19N40 Rev.C0
3
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