FDP19N40_12 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 400V, 19A, 0.24Ω

FDP19N40
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
• R_DS(on) =0.2Ω ( Typ.)@ V_GS = 10V, I_D = 9.5A
• Low Gate Charge ( Typ. 32nC)
• Low C_rss ( Typ. 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
February 2012
UniFET^TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
GDS
TO-220
FDP Series
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FDP19N40
400
±30
19
11.4
76
542
19
21.5
15
215
1.65
-55 to +150
300
FDP19N40
0.6
0.5
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDP19N40 Rev.C0
www.fairchildsemi.com