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FDP100N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
5.5 V
10
5
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
5
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.020
0.015
0.010
0.005
VGS = 10V
VGS = 20V
0.000
0
*Note: TJ = 25oC
50 100 150 200 250 300 350
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
Ciss
4000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
2000
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
1000
100
150oC
-55oC
10
25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
2
4
6
8
10
12
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
100
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 80V
VDS = 50V
8
VDS = 25V
6
4
2
*Note: ID = 75A
0
0
15 30 45 60 75 90
Qg, Total Gate Charge [nC]
FDP100N10 Rev. A1
3
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