FDP100N10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

July 2007
FDP100N10
tm
N-Channel PowerTrench^® MOSFET
100V, 75A, 10mΩ
Features
• R_DS(on) = 8.2mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handing capability
• RoHS compliant
Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Applications
• DC to DC converters / Synchronous Rectification
D
G
G DS
TO-220
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 75^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction to Case
R_θCS
Thermal Resistance, Case to Sink Typ.
R_θJA
Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
75
300
365
4.8
208
1.4
-55 to +175
300
Ratings
0.72
0.5
62.5
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FDP100N10 Rev. A1
www.fairchildsemi.com