FDP032N08_12 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ

Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
V_GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.1
0.01
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
0.1
1
V_DS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0030
0.0025
V_GS = 10V
V_GS = 20V
0.0020
0
*Note: T_C = 25^oC
100
200
300
400
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
10000
1000
C_iss
C_oss
C_rss
*Note:
1. V_GS = 0V
2. f = 1MHz
100
0.1
1
10
80
V_DS, Drain-Source Voltage [V]
FDP032N08 Rev. C0
Figure 2. Transfer Characteristics
500
100
175^oC
-55^oC
25^oC
10
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
1
2
4
6
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
175^oC
25^oC
10
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
1
0.0
0.5
1.0
1.5
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 15V
V_DS = 37.5V
8
V_DS = 60V
6
4
2
*Note: I_D = 75A
0
0
50
100
150
200
Q_g, Total Gate Charge [nC]
3
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