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FDP032N08_12 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ | |||
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September 2012
FDP032N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.2mΩ
Features
⢠RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
⢠Fast switching speed
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(on)
⢠High power and current handling capability
⢠RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductorâs adcanced PowerTrench® process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
⢠DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
FDP032N08
75
±20
235*
165*
120
940
1995
6.0
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP032N08
0.4
0.5
62.5
Units
oC/W
©2012 Fairchild Semiconductor Corporation
1
FDP032N08 Rev. C0
www.fairchildsemi.com
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