FDMS3669S Datasheet, PDF (3/16 Pages) Fairchild Semiconductor – PowerTrench® Power Stage

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
V_GS = 0 V, I_S = 13 A
(Note 2) Q1
V_SD
Source to Drain Diode
Forward Voltage
V_GS = 0 V, I_S = 2 A
V_GS = 0 V, I_S = 18 A
(Note 2) Q1
(Note 2) Q2
V_GS = 0 V, I_S = 2 A
(Note 2) Q2
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Q1:
Q1
I_F = 13 A, di/dt = 100 A/μs
Q2
Q2:
Q1
I_F = 18 A, di/dt = 300 A/μs
Q2
0.8 1.2
0.7 1.2
0.8 1.2
V
0.7 1.2
24
21
38
33
ns
8
16
15
31
nC
Notes:
1. R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in² pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in² pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4.
5.
E_AS
E_AS
of
of
61
48
mJ
mJ
is
is
based
based
on
on
starting
starting
T_J
T_J
=
=
25
25
o_C;
o_C;
N-ch:
N-ch:
L
L
=
=
3
3
mH,
mH,
I_AS
I_AS
=
=
6.4
5.7
A,
A,
V_DD
V_DD
=
=
30
30
V,
V,
V_GS
V_GS
=
=
10
10
V.
V.
100%
100%
test
test
at
at
L=
L=
0.1
0.1
mH,
mH,
I_AS
I_AS
=
=
20
17
A.
A.
6. Pulsed Id limited by junction temperature,td<=10uS. Please refer to SOA curve for more details.
©2013 Fairchild Semiconductor Corporation
3
FDMS3669S Rev.C1
www.fairchildsemi.com