FDMS3669S Datasheet, PDF (1/16 Pages) Fairchild Semiconductor – PowerTrench® Power Stage

FDMS3669S
PowerTrench^® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max r_DS(on) = 10 mΩ at V_GS = 10 V, I_D = 13 A
„ Max r_DS(on) = 14.5 mΩ at V_GS = 4.5 V, I_D = 10 A
Q2: N-Channel
„ Max r_DS(on) = 5 mΩ at V_GS = 10 V, I_D = 18 A
„ Max r_DS(on) = 5.2 mΩ at V_GS = 4.5 V, I_D = 17 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
January 2013
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET^TM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top
Power 56
Bottom
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 ₅
S2 6
S2 ₇
G2 ₈
Q2
4 ^D1
PHASE
3 D1
2 ^D1
Q1
1 ^G1
(Note 3)
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
(Note 6)
T_A = 25 °C
T_A = 25 °C
Q1
Q2
30
30
±20
±12
24
60
43
13^1a
75
18^1b
50
61⁴
2.2^1a
1.0^1c
60
48⁵
2.5^1b
1.0^1d
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
57^1a
125^1c
5.0
50^1b
120^1d
2.8
°C/W
Device Marking
9ACF
21CD
Device
FDMS3669S
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
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