FDMC8321L Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
100
80
60
40
20
0
0
V_GS = 3.5 V
V_GS = 10 V
V_GS = 4.5 V
V_GS = 4 V
V_GS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
6
V_GS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
5
4
V_GS = 3.5 V
3
2
V_GS = 4 V
1
V_GS = 4.5 V
V_GS = 10 V
0
0
20
40
60
80
100
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5
I_D = 22 A
V_GS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
10
I_D = 22 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
6
4
T_J = 125 ^oC
2
T_J = 25 ^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
V_DS = 5 V
60
40
20
0
1.5
T_J = 150 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
2.0
2.5
3.0
3.5
4.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V_GS = 0 V
10
T_J = 150 ^oC
1
0.1
T_J = 25 ^oC
0.01
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC8321L Rev.C2
3
www.fairchildsemi.com