FDMC8321L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET

February 2013
FDMC8321L
N-Channel Power Trench^® MOSFET
40 V, 49 A, 2.5 mΩ
Features
„ Max r_DS(on) = 2.5 mΩ at V_GS = 10 V, I_D = 22 A
„ Max r_DS(on) = 4.1 mΩ at V_GS = 4.5 V, I_D = 18 A
„ Advanced Package and Silicon combination for low r_DS(on)
and hign efficiency
„ Next Generation enhanced body diode technology,
engineered for soft recovery
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
convertional switching PWM contollers. It has been optimized for
low gate charge, low r_DS(on), fast switching speed body diode
reverse recovery performance.
Applications
„ Synchronous rectifier
„ Load switch/Orring
„ Motor switch
Top
Bottom
S ^{Pin 1}
S
D
S
S
G
S
D
D
D
D
D
Power 33
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
40
±20
49
22
100
86
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.1
(Note 1a)
53
°C/W
Device Marking
FDMC8321L
Device
FDMC8321L
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMC8321L Rev.C2
www.fairchildsemi.com