FDMC8030 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
50
5
V_GS = 10 V
V_GS = 4.5 V
40
4
V_GS = 3.5 V
V_GS = 3.2 V
30
3
V_GS = 3 V
20
2
V_GS = 3 V
V_GS =3.2 V
V_GS = 3.5 V
10
0
0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0
0
10
20
V_GS = 4.5 V
30
I_D, DRAIN CURRENT(A)
V_GS = 10 V
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
I_D = 12 A
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
40
V_DS = 5 V
30
20
10
0
1
T_J = 150 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
2
3
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
25
I_D = 12 A
20
15
T_J = 125 ^oC
10
T_J = 25 ^oC
5
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
V_GS = 0 V
10
1
T_J = 150 ^oC
0.1
T_J = 25 ^oC
0.01
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
3
FDMC8030 Rev.C
www.fairchildsemi.com