FDMC8030 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ

FDMC8030
Dual N-Channel Power Trench^® MOSFET
40 V, 12 A, 10 mΩ
August 2011
Features
General Description
„ Max r_DS(on) = 10 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 14 mΩ at V_GS = 4.5 V, I_D = 10 A
„ Max r_DS(on) = 28 mΩ at V_GS = 3.2 V, I_D = 4 A
„ Termination is Lead-free and RoHS Compliant
This device includes two 40V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
„ Battery Protection
„ Load Switching
„ Point of Load
Pin 1
G1 S1 S1 S1
D1
D2
G2 S2 S2 S2
Power 33
G2 ₈
Bottom Drain2 Contact
S2 7
Q2
S2 ₆
Q1
S2 ₅
Bottom Drain1 Contact
1 ^G1
2 S1
3 ^S1
4 ^S1
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
40
±12
12
50
21
1.9
0.8
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
155
°C/W
Device Marking
FDMC8030
Device
FDMC8030
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMC8030 Rev.C
www.fairchildsemi.com