FDFME2P823ZT Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

Electrical Characteristics
Notes:
1. R_θJA is determined with the device mounted on a 1 in² oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θJA is determined by the
user's board design.
(a) MOSFET R_θJA = 90 °C/W when mounted on a 1 in² pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.
(b) MOSFET R_θJA = 195 °C/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky R_θJA = 110 °C/W when mounted on a 1 in² pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.
(d) Schottky R_θJA = 234 °C/W when mounted on a minimum pad of 2 oz copper.
a. 90 °C/W when mounted on
a 1 in² pad of 2 oz copper.
b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.
c. 110 °C/W when mounted on
a 1 in² pad of 2 oz copper.
d. 234 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
4. Rating is applicable to MOSFET only.
©2010 Fairchild Semiconductor Corporation
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FDFME2P823ZT Rev.C1
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