FDFME2P823ZT Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
-20 V, -2.6 A, 142 mΩ
Features
General Description
„ Max r_DS(on) = 142 mΩ at V_GS = -4.5 V, I_D = -2.3 A
„ Max r_DS(on) = 213 mΩ at V_GS = -2.5 V, I_D = -1.8 A
„ Max r_DS(on) = 331 mΩ at V_GS = -1.8 V, I_D = -1.5 A
„ Max r_DS(on) = 530 mΩ at V_GS = -1.5 V, I_D = -1.2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Schottky: V_F < 0.57 V @ 1A
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600 V (Note 3)
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable appliacrions. It features as MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum condution losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Battery Charging
„ DC-DC Conversion
Pin 1
D
NC
A
K
D
S
G
K
A1
NC 2
D3
6K
5G
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
V_RRM
I_O
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
T_A = 25 °C
T_A = 25 °C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-20
±8
-2.6
-6
1.4
0.6
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
90
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1b)
195
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1c)
110
R_θJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1d)
234
Package Marking and Ordering Information
°C/W
Device Marking
3T
Device
FDFME2P823ZT
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
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