FDD4685 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm

Typical Characteristics T_J = 25°C unless otherwise noted
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
V_GS = -10V
60
40
V_GS = -6V
V_GS = -4.5V
V_GS = -4V
20
V_GS = -3V
0
0
1
2
3
4
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.0
V_GS = -3V
2.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V_GS = -4V
2.2
V_GS = -4.5V
1.8
V_GS = -6V
1.4
1.0
V_GS = -10V
0.6
0
20
40
60
80
100
-I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D =-8.4A
1.6 ^{VGS = -10V}
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
70
I_D = -8.4A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
50
T_J = 125^oC
40
30
T_J = 25^oC
20
2 3 4 5 6 7 8 9 10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
60
40
T_J = 25^oC
20
T_J = 150^oC
T_J = -55^oC
0
1
2
3
4
5
6
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
40
V_GS = 0V
10
T_J = 150^oC
T_J = 25^oC
1
T_J = -55^oC
0.1
0.4
0.6
0.8
1.0
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD4685 Rev.B
3
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