FDD4685 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm

October 2006
FDD4685
40V P-Channel PowerTrench^® MOSFET
tm
–40V, –32A, 27mΩ
Features
General Description
„ Max r_DS(on) = 27mΩ at V_GS = –10V, I_D = –8.4A
„ Max r_DS(on) = 35mΩ at V_GS = –4.5V, I_D = –7A
„ High performance trench technology for extremely low r_DS(on)
„ RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench^® technology to
deliver low r_DS(on) and good switching characteristic offering
superior performance in application.
Application
„ Inverter
„ Power Supplies
G
S
D
D_{T O}- P_-2A₅K₂
(T O -25 2)
S
G
D
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
-Continuous(Silicon Limited)
-Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T_C= 25°C
T_C= 25°C
T_A= 25°C
T_C= 25°C
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
–40
±20
–32
–40
–8.4
–100
121
69
3
–55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
40
°C/W
Device Marking
FDD4685
Device
FDD4685
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDD4685 Rev.B
www.fairchildsemi.com