FDC608PZ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
20
V_GS = -4.5V
-3.5V
15
-2.5V
-3.0V
10
-2.0V
5
0
0
0.5
1
1.5
2
2.5
3
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
I_D = -5.8A
V_GS = -4.5V
1.3
2.6
V_GS= -2.0V
2.2
1.8
1.4
-2.5V
-3.0V
-3.5V
1
-4.0V
-4.5V
0.6
0
5
10
15
20
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
I_D = -2.9A
0.08
1.1
0.9
0.7
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.06
0.04
T_A = 25^oC
T_A = 125^oC
0.02
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V_DS = -5V
15
100
V_GS = 0V
10
1
10
T_A = -55^oC
125^oC
5
25^oC
0
0
0.5
1
1.5
2
2.5
3
-V_GS, GATE TO SOURCE VOLTAGE (V)
0.1
0.01
0.001
T_A = 125^oC
25^oC
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC608PZ Rev B (W)