FDC608PZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

June 2006
FDC608PZ
tm
P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.
Features
• –5.8 A, –20 V. R_DS(ON) = 30 mΩ @ V_GS = –4.5 V
R_DS(ON) = 43 mΩ @ V_GS = –2.5 V
• Low Gate Charge
• High performance trench technology for extremely
low R_DS(ON)
• SuperSOT ^TM –6 package: small footprint (72%
smaller than standard SO–8) low profile (1mm thick).
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.608Z
FDC608PZ
7’’
Ratings
–20
±12
–5.8
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDC608PZ Rev B (W)