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CNY17F23S Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS
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MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
ELECTRICAL CHARACTERISTICS (TA =25°C Unless otherwise specified)(1)
Characteristic
Symbol
Min
Typ**
INPUT LED
Forward Voltage
(IF = 60 mA)
(IF = 10 mA)
Reverse Leakage Current (VR = 5.0 V)
Capacitance
CNY17F-X
MOC810X
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
(VCE = 10 V, TA = 25°C)
(VCE = 10 V, TA = 100°C)
MOC8101/2/3/4/5
MOC8106/7/8, CNY17F-1/2/3/4
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
(IC = 1.0 mA)
(IC = 1.0 mA)
(IE = 100 µA)
(f = 1.0 MHz, VCE = 0)
MOC8101
MOC8102
MOC8103
Output Collector Current
(IF = 10 mA, VCE = 10 V)
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F-1
(IF = 10 mA, VCE = 5 V)
CNY17F-2
CNY17F-3
CNY17F-4
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4
MOC8101/2/3/4/5/6/7/8
Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
(IC = 2.5 mA, IF = 10 mA)
(IC = 500 µA, IF = 5.0 mA)
(f = 60 Hz, t = 1.0 min.)(4)
(VI-O = 500 V)(4)
(VI-O = 0, f = 1.0 MHz)(4)
VF
IR
C
ICEO1
ICEO2
V(BR) CEO
V(BR) ECO
CCE
(CTR)(2)
VCE(sat)
VISO
RISO
CISO
—
1.0
—
—
—
—
30
70
7.0
—
50
73
108
160
65
50
100
250
40
63
100
160
—
5300
1011
—
1.40
1.18
0.001
18
1.0
1.0
100
100
10
8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
Max
Unit
1.65
V
1.5
10
µA
—
pF
50
nA
—
µA
—
V
—
—
V
—
pF
80
117
173
256
133
150
%
300
600
80
125
200
320
0.4
V
—
Vac(rms)
—
Ω
—
pF
© 2004 Fairchild Semiconductor Corporation
Page 3 of 12
1/21/04
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