BDW94C Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

Typical Performance Characteristics
Figure 1. DC Current Gain
100k
V_CE = -3V
10k
1k
Figure 2. Collector-Emitter Saturation Voltage
-10
I_C= 250 I_B
-1
100
-0.1
-1
-10
-100
I_C [A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
-20
V_CE= -3V
-16
-12
-8
-4
-0
-0.0
-0.8
-1.6
-2.4
-3.2
-4.0
V_BE [V], BASE-EMITTER VOLTAGE
Figure 5. Safe Operating Area
-100
I_C MAX.
-10
5 ms 1 ms
DC
100uS
-1
-0.1
-1
BDW94
BDW94A
BDW94B
BDW94C
-10
-100
-1000
V_CE [V], COLLECTOR EMITTER VOLTAGE
-0.1
-0.1
-1
-10
-100
I_C [A], COLLECTOR CURRENT
Figure 4. Output Capacitance
1000
f=1MHz
I_E=0
100
10
-1
-10
-100
V_CB [V], COLLECTOR-BASE VOLTAGE
Figure 6. Power Derating
120
100
80
60
40
20
0
0
50
100
150
200
250
Tc [^oC], CASE TEMPERATURE
BDW94/C Rev. B
3
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