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| BDW94C Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VCEO(sus)
ICBO
ICEO
IEBO
hFE
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94C
Collector Cut-off Current
: BDW94
: BDW94C
Collector Cut-off Current
: BDW94
: BDW94C
Emitter Cut-off Current
DC Current Gain *
VCE(sat)
VBE(sat)
VF
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
IC = -100mA, IB = 0
VCB = -45V, IE = 0
VCB = -100V, IE = 0
VEB = -45V, IB = 0
VCE = -100V, IB = 0
VEB = -5V, IC = 0
VCE = -3V, IC = -3A
VCE = -3V, IC = -5A
VCE = -3V, IC = -10A
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
IF = -5A
IF = -10A
Min. Typ. Max Units
-45
V
-100
V
-100
µA
-100
µA
-1
mA
-1
mA
-2
mA
1000
750
100
20000
-2
V
-3
V
-2.5
V
-4
V
-1.3
-2
V
-1.8
-4
V
BDW94/C Rev. B
2
www.fairchildsemi.com
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