BDW24 Datasheet, PDF (3/5 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Typical Characteristics
10000
VCE = -3V
1000
100
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-8
VCE = -3V
-7
-6
-5
-4
-3
-2
-1
-0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TC[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
-2.4
IC = 250 IB
-2.0
-1.6
-1.2
-0.8
-0.4
-0.0
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
-100
-10 IC(max). Pulsed
IC(max).
Continuous
-1
-0.1
-1
BDW24
BDW24A
BDW24B
BDW24C
-10
10µs
100µs
1ms
10ms
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000