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BDW24 Datasheet, PDF (2/5 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
IC = - 100mA, IB = 0
ICBO
ICEO
IEBO
hFE
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
VF
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VCE = - 22V, IB = 0
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
VEB = - 5V, IC = 0
VCE = - 3V, IC = - 1A
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 6A
IC = - 2A, IB = - 8mA
IC = - 6A, IB = - 60mA
IC = - 2A, IB = - 8mA
VCE = - 3V, IC = - 1A
VCE = - 3V, IC = - 6A
IF = - 2A
Min.
- 45
- 60
- 80
- 100
1000
750
100
Typ.
Max. Units
V
V
V
V
- 200 µA
- 200 µA
- 200 µA
- 200 µA
- 500 µA
- 500 µA
- 500 µA
- 500 µA
- 2 mA
20000
-2
V
-3
V
- 2.5 V
- 2.5 V
-3
V
- 1.8 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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