BDW23 Datasheet, PDF (3/5 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Typical Characteristics
10000
VCE = 3V
1000
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
2.4
IC = 250 IB
2.0
1.6
1.2
0.8
0.4
0.0
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TC[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
8.0
7.5
VCE = 3V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 2. Collector-Emitter Saturation Voltage
100
10 IC(max). Pulsed
10µs
IC(max).
Continuous
100µs
1
BDW23
BDW23A
BDW23B
1ms
10ms
0.1
1
BDW23C
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000