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BDW23 Datasheet, PDF (2/5 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICBO
ICEO
IEBO
hFE
Collector-Emitter Sustaining Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
VF
* Parallel Diode Forward Voltage
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
IC = 100mA, IB = 0
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 1A
VCE = 3V, IC = 2A
VCE = 3V, IC = 6A
IC = 2A, IB = 8mA
IC = 6A, IB = 60mA
IC = 2A, IB = 8mA
VCE = 3V, IC = 1A
VCE = 3V, IC = 6A
IF = 2A
Min.
Typ.
Max.
Unit
s
45
V
60
V
80
V
100
V
200 µA
200 µA
200 µA
200 µA
1000
750
100
500
µA
500 µA
500 µA
500 µA
2
mA
20000
2
V
3
V
2.5
V
2.5
V
3
V
1.8
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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