BCV27_00 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – NPN Darlington Transistor

Typical Characteristics (continued)
Collector-Cutoff Current
vs Ambient Temperature
100
V_CB= 30V
10
1
0.1
0 .0 1
25
50
75
100
125
T_A- AMBIE NT TEMP ERATURE (_°C)
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
20
10
Cib
5
Cob
2
0.1
1
10
100
V - COLLECTOR VOLTAGE(V)
NPN Darlington Transistor
(continued)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
62.5
62
61.5
61
60.5
60
59.5
0.1
1
10
100
1000
RESISTANCE (kΩ)
Gain Bandwidth Product
vs Collector Current
500
Vce = 5V
400
300
3
200
100
0
1
10
20
50
100 150
I_C - COLLECTOR CURRENT (mA)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
SOT-23
25
50
75
100
125
150
TEMPERATURE (^oC)