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BCV27_00 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – NPN Darlington Transistor
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Electrical Characteristics
Symbol
Parameter
NPN Darlington Transistor
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 100 nA, IC = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, IB = 0.1 mA
30
40
10
4,000
10,000
20,000
V
V
V
0.1 µA
0.1 µA
1.0
V
1.5
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
CC
Collector Capacitance
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 30 V, IE = 0, f = 1.0 MHz
220
MHz
3.5
pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
250
VCE = 5V
200
125 °C
150
25 °C
100
- 40 °C
50
0
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Base-Emitter Saturation
Voltage vs Collect or Current
2
β = 1000
1.6
- 40 °C
25 °C
1.2
125 °C
0.8
0.4
0
1
10
100
1 00 0
IC - COLLECTOR CURRE NT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 °C
0.8
0.4
25°C
125 °C
0
1
10
100
1000
I C - COLLECTOR CURRE NT (mA)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 °C
25 °C
1.2
125 °C
0.8
0.4
VCE = 5V
0
1
10
10 0
1 00 0
I C - COLLECTOR CURRE NT (mA)
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