BCP54_00 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2 β = 10
1
- 40 °C
0.8
0.6
0.4
25°C
125 °C
0.2
1
10
100
I _C - COLLE CTOR CURRENT ( mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
10 0
V_CB= 40V
10
1
0.1
25
50
75
10 0
125
150
T _A - AMBIENT TE MPE RATURE (_°C)
Gain Bandwidth Product
vs Collector Current
500
V _CE = 10V
400
300
200
100
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
25°C
0.6
125 °C
0.4
V_CE = 5V
0.2
0.001
0.01
0.1
1
I _C - COLLE CTOR CURRENT (A)
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
3
20
10
0
0
4
8
12
16
20
24
28
V_CB - COLLECTOR-BASE VOLTAGE (V)
1.5
1.25
1
0.75
0.5
0.25
0
0
Power Dissipation vs
Ambient Temperature
SOT-223
25
50
75
100
125
150
TEMPERATURE (^o C)