BCP54_00 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

BCP54
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
45
45
V
V
3
V_EBO
Emitter-Base Voltage
5.0
V
I_C
Collector Current - Continuous
1.5
A
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
Max
BCP54
1.5
12
83.3
Units
W
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation