BC857A Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
- 40 ºC
0.6
25 °C
125 ºC
0.4
0.2
0
0.1
1
10
100 300
I _C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
100
V _CB= 50V
10
1
0.1
0.01
25
50
75
100
125
T_A- AMBIENT TEMPERATURE (ºC)
Collector Saturation Region
4
Ta = 25°C
3
2 _{Ic = 100 uA}
50 mA
300 mA
1
0
100 300 700 2000 4000
I _B- BASE CURRENT (uA)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
0.6
0.4
25 °C
125 ºC
0.2
0
0.1
V_CE = 5V
1
10
100 200
I _C - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
0.1
1
10
100
1000
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
10
Cib
Cob
0.1
1
10
100
Vce- COLLECTOR VOLTAGE(V)