BC857A Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage I_C = 10 mA, I_B = 0
45
V_(BR)CBO
Collector-Base Breakdown Voltage
I_C = 10 µA, I_E = 0
50
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_E = 1.0 µA, I_C = 0
5.0
I_CBO
Collector-Cutoff Current
V_CB = 30 V
V_CB = 30 V, T_A = 150°C
ON CHARACTERISTICS
h_FE
V_CE(sat)
V_BE(on)
DC Current Gain
I_C = 2.0 mA, V_CE = 5.0 V
BC857A
125
BC857B
220
BC857C
420
Collector-Emitter Saturation Voltage
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5.0 mA
Base-Emitter On Voltage
I_C = 2.0 mA, V_CE = 5.0 V
0.6
I_C = 10 mA, V_CE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
f_T
Current Gain - Bandwidth Product
I_C = 10 mA, V_CE = 5.0,
100
f = 100 mHz
C_obo
Output Capacitance
V_CB = 10 V, f = 1.0 MHz
NF
Noise Figure
I_C = 0.2 mA, V_CE = 5.0,
R_S = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
15
4.0
250
475
800
0.3
0.65
0.75
0.82
4.5
10
V
V
V
nA
µA
V
V
V
V
MHz
pF
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400 ^{125 °C}
V_CE = 5V
300
25 °C
200
100 - 40 °C
0
0.01
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 _{β = 10}
0.2
0.15
0.1
25 °C
0.05
0
0.1
125 ºC
- 40 ºC
1
10
100 300
I _C - COLLECTOR CURRENT (mA)
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