BC856AMTF Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

Typical Performance Characteristics
-50
-45
I = - 400µA
B
-40
I = - 350µA
B
-35
I = - 300µA
B
I = - 250µA
-30
B
-25
I = - 200µA
B
-20
I = - 150µA
B
-15
I = - 100µA
B
-10
I = - 50µA
B
-5
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
-10
-1
VBE(sat)
IC = 10 IB
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f=1MHz IE=0
10
1000
100
V = - 5V
CE
10
-0.1
-1
-10
-100
I [mA], COLLECTOR CURRENT
C
Figure 2. DC current Gain
-100
VCE = - 5V
-10
-1
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
f=1MHz IE=0
100
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
3
BC856- BC860 Rev. B
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