BC856AMTF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
V_CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
V_BE (on)
f_T
Collector Cut-off Current
V_CB= -30V, I_E=0
DC Current Gain
V_CE= -5V, I_C= -2mA
Collector-Emitter Saturation Voltage I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
Base-Emitter Saturation Voltage
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
Base-Emitter On Voltage
V_CE= -5V, I_C= -2mA
V_CE= -5V, I_C= -10mA
Current Gain Bandwidth Product
V_CE= -5V, I_C= -10mA
f=100MHz
C_ob
Output Capacitance
NF
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CB= -10V, I_E=0, f=1MHz
V_CE= -5V, I_C= -200µA
R_G=2KΩ, f=1KHz
V_CE= -5V, I_C= -200µA
R_G=2KΩ, f=30~15000Hz
Min.
110
-600
August 2006
tm
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
6
10
4
4
2
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
©2006 Fairchild Semiconductor Corporation
1
BC856- BC860 Rev. B
www.fairchildsemi.com