BC856 Datasheet, PDF (3/5 Pages) NXP Semiconductors – PNP general purpose transistors

Typical Characteristics
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
-0
-0
I
B
=
-
400µA
I
B
=
-
350µA
I
B
=
-
300µA
I
B
=
-
250µA
I
B
=
-
200µA
I
B
=
-
150µA
I
B
=
-
100µA
I
B
=
-
50µA
-2
-4
-6
-8 -10 -12 -14 -16 -18 -20
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
-1
VBE(sat)
IC = 10 IB
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f=1MHz IE=0
10
1000
100
VCE = - 5V
10
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-100
VCE = - 5V
-10
-1
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
f=1MHz IE=0
100
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, August 2002